Semiconductor Materials and Nanostructures
Semiconductor compound, for example, InP and GaN are the materials reason for many photonic and progressed microelectronic gadgets. Periodic structures in these materials have possible applications in photonic bandgap gadgets for ultra-quick optical communications. Electrochemical and photoelectrochemical etching and it developed as an extremely encouraging strategy for fitting the properties of semiconductors. Modulation of the pore diameter across and direction could take into account the manufacture of gadgets in light of photonic crystal structures. The work includes nanostructural portrayal utilizing atomic force(AFM) and scanning tunneling (STM) microscopy, high goals transmission and scanning electron microscopy (TEM and SEM), potential-dependant photoluminescence (PDPL) and variety of electroanalytical, electrical and spectroscopic methods and as well as microelectronics fabrication systems.