Graphene Field Effect Transistors (GFETs)

Graphene has been changing gadgets since October 2004 when Andre Geim and Kostya Novoselov first decided how to evacuate a solitary layer of carbon cross section from graphite. The creation and research of the present graphene field impact transistors (GFETs) would not have been conceivable without the previous two many years of research, and offer numerous advantages over conventional bipolar intersection transistors. This is all because of the characteristic characteristics of graphene, which implies GFETs can be utilized to great impact in a scope of advances, including organic and compound sensors.